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SGS6N60UFD
April 2001
IGBT
SGS6N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature..
Features
* * * * High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 3A High input impedance CO-PAK, IGBT with FRD : trr = 35ns (typ.)
Application
AC & DC Motor controls, general purpose inverters, robotics, servo controls
C
G
GCE
TO-220F
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering purposes, 1/8" from case for 5 seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
SGS6N60UFD 600 20 6 3 25 4 25 22 9 -55 to +150 -55 to +150 300
Units V V A A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 5.5 8.0 62.5 Units C/W C/W C/W
(c)2001 Fairchild Semiconductor Corporation
SGS6N60UFD Rev. A
SGS6N60UFD
Electrical Characteristics of IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C A nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 3mA, VCE = VGE IC = 3A, VGE = 15V IC = 6A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---220 22 7 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 25 60 70 57 25 82 22 32 80 122 65 46 111 15 5 4 7.5 --130 150 --120 --200 300 --170 22 8 6 -ns ns ns ns J J J ns ns ns ns J J J nC nC nC nH
VCC = 300 V, IC = 3A, RG = 80, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 3A, RG = 80, VGE = 15V, Inductive Load, TC = 125C
VCE = 300 V, IC = 3A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
IF = 4A
Test Conditions TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.4 1.3 35 53 3.5 4.5 60 120
Max. 1.7 -52 -5.0 -135 --
Units V ns A nC
IF = 4A, di/dt = 200A/s
TC = 25C TC = 100C TC = 25C TC = 100C
(c)2001 Fairchild Semiconductor Corporation
SGS6N60UFD Rev. A
SGS6N60UFD
30 Common Emitter T C = 25 25 20V
15 Common Emitter VGE = 15V TC = 25 TC = 125
Collector Current, I C [A]
15V 20
Collector Current, IC [A]
8
12
9
15
12V
6
10
V GE = 10V
5
3
0 0 2 4 6
0 0.5 1 10
Collector - Emitter Voltage, V CE [V]
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Chacracteristics
Fig 2. Typical Saturation Voltage Characteristics
4
5 Common Emitter V GE = 15V 4
Collector - Emitter Voltage, V [V] CE
V CC = 300V Load Current : peak of square wave
3
6A
Load Current [A]
3
2
3A
2
IC = 1.5A 1
1 Duty cycle : 50% TC = 100 Power Dissipation = 5W 0.1 1 10 100 1000
0 0 30 60 90 120 150
0
Case Temperature, TC []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter T C = 125
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V [V] CE
16
16
12
12
8
8 6A 4 IC = 1.5A 0 3A
4 IC = 1.5A 0 0 4 8
6A 3A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2001 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGS6N60UFD Rev. A
SGS6N60UFD
400 350 300 Common Emitter V GE = 0V, f = 1MHz T C = 25
100 Common Emitter V CC = 300V, VGE = 15V IC = 3A T C = 25 T C = 125
Ton
Capacitance [pF]
Cies 250 200 150 100 50 0 1 10 30
Switching Time [ns]
Tr
Coes Cres 10 1 10 100 400
Collector - Emitter Voltage, V CE [V]
Gate Resistance, R G [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
600
Switching Time [ns]
Common Emitter VCC = 300V, VGE = 15V IC = 3A TC = 25 TC = 125 Toff Toff
300 Common Emitter V CC = 300V, V GE = 15V IC = 3A T C = 25 T C = 125
100
Switching Loss [uJ]
Eon Eoff Eoff
Tf 100
10 Tf 50 1 10 100 400 5 1 10 100 400
Gate Resistance, R G []
Gate Resistance, R G []
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200 Common Emitter VCC = 300V, VGE = 15V RG = 80 TC = 25 TC = 125
500 Common Emitter V CC = 300V, V GE = 15V RG = 80 TC = 25 TC = 125
Switching Time [ns]
Switching Time [ns]
100
Toff
Ton
100 Tr
Tf
10 1 2 3 4 5 6
50 1 2 3 4 5 6
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2001 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGS6N60UFD Rev. A
SGS6N60UFD
200 Common Emitter V CC = 300V, VGE = 15V RG = 80 T C = 25 T C = 125
15 Common Emitter RL = 100 Tc = 25
Gate - Emitter Voltage, V [ V ] GE
100
12
Switching Loss [uJ]
9 300 V 6 VCC = 100 V 3 200 V
Eon Eon Eoff 10 Eoff 5 1 2 3 4 5 6
0 0 3 6 9 12 15
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 Ic MAX. (Pulsed) 10 Ic MAX. (Continuous) 1 1 DC Operation Single Nonrepetitive Pulse TC = 25 Curves must be derated linerarly with increase in temperature 0.3 1 10 100 1000 100us
50
Collector Current, I C [A]
Collector Current, IC [A]
50us
10
1
0.1
Safe Operating Area VGE =20V, TC=100 C 0.1 1 10 100 1000
o
0.01
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
10
0.5
Thermal Response, Zthjc [/W]
0.2 1 0.1 0.05 0.02 0.1 0.01
Pdm t1
single pulse
t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
0.01 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2001 Fairchild Semiconductor Corporation SGS6N60UFD Rev. A
SGS6N60UFD
100 T C = 25 T C = 100
100 VR=200V IF=4A TC = 25 TC = 100
10
Reverse Recovery Current, I rr [A]
Forward Current, IF [A]
10
1
0.1 0 1 2 3 4
1 100
1000
Forward Voltage Drop, VFM [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
300
100 V R = 200V IF = 4A T C = 25 T C = 100
Stored Recovery Charge, Qrr [nC]
200
Reverce Recovery Time, trr [ns]
250
80
V R=200V IF=4A T C = 25 T C = 100
60
150
40
100
50
20
0 100
1000
0 100
1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2001 Fairchild Semiconductor Corporation
SGS6N60UFD Rev. A
SGS6N60UFD
Package Dimension
TO-220F (FS PKG CODE AQ)
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation SGS6N60UFD Rev. A
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST(R) FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM
PACMANTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM Star* PowerTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H1

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